ABSTRACT
In many disordered semiconductor materials the effective mobility of one specie of carriers (electrons/holes) is much higher than the other(holes/ electrons). For example, in the case of hydrogenated amorphous silicon based TFTs, the electron mobility is significantly higher than the hole mobility. This leads to TFTs of n-type being much stronger than p-type. The case is opposite in many polymer semiconductors such as poly(3,3 dialkylquater-thiophene). Therefore, electronics based on such semiconductors are for all practical purposes devoid of complementary devices.
