chapter  6
Semiconductors Physical Properties
Pages 6

Cadmium selenide (CdSe) Se 2.6 × 10−3 1.55 700-1800

Cadmium sulfide (CdS) Ag 2.5 × 10+1 1.2 250-500 Cd 3.4 2.0 750-1000 Cu 1.5 × 10−3 0.76 450-750

Cadmium telluride (CdTe) Au 6.7 × 10+1 2.0 600-1000 In 4.1 × 10−1 1.6 450-1000

Calcium ferrate (III) (CaFe2O4) Ca 30 3.7 Fe 0.4 3.1

α-Calcium metasilicate (CaSiO3) Ca 7.4 × 10+4 4.8

Gallium antimonide (GaSb) Ga 3.2 × 10+3 3.15 650-700 In 1.2 × 10−7 0.53 400-650 Sb 3.4 × 10+4 3.44 650-700

8.7 × 10+2 1.13 470-570

Sn 2.4 × 10−5 0.80 320-570 Te 3.8 × 10−4 1.2 400-650

Gallium arsenide (GaAs) Ag 2.5 × 10−3 1.5 4 × 10−4 0.8 ± 0.05 500-1160

As 4 × 1021 10.2 ± 1.2 1200-1250 Au 10−3 1.0 ± 0.2 740-1024

Cd 0.05 ± 0.04 2.43 ± 0.06 868-1149 50 × 10−2 b 2.8b

Cu 0.03 0.52 100-600

Ga 1 × 10+7 5.60 ± 0.32 1125-1250

Li 0.53 1.0 250-400

Mg 1.4 × 10−4 1.89 2.3 × 10−2 2.6 740-1024 2.6 × 10−2 b 2.7b

6.5 × 10−1 b 2.49b

8.5 × 10−3 1.7 740-1024

S 1.2 × 10−4 1.8 1.6 × 10−5 b 1.63b

(Continued)

Semiconductor Diffusing Element Do (cm2/s) ΔE (eV)

of Validity (°C)

2.6 × 10−5 1.86 4 × 103 4.04 ± 0.15 1000-1200

Se 3 × 103 4.16 ± 0.16 1000-1200

Sn 3.8 × 10−2 b 2.7 6 × 10−4 2.5 1069-1215

Zn 2.5 × 10−1 b 3.0b

3.0 × 10−7 1.0 6.0 × 10−7 0.6 15 ± 7 2.49 ± 0.05 800

Gallium phosphide (GaP) Zn 1.0 2.1 700-1300

Germanium (Ge) Ag 4.4 × 10−2 1.0 700-900 As 6.3 2.4 600-850 Au 2.2 × 10−2 2.5 B 1.6 × 10−9 4.6 600-850

Cu 1.9 × 10−4 0.18 600-850 Fe 1.3 × 10−1 1.1 750-850 Ga 4.0 × 10+1 3.1 600-850 Ge 8.7 × 10+1 3.2 750-920

He 6.1 × 10−3 0.69 750-850 In 3 × 10−2 2.4 600-850 Li 1.3 × 10−4 0.47 200-600 Ni 8 × 10−1 0.9 700-875

P 2.5 2.5 600-850 Pb – 3.6 600-850 Sb 4.0 2.4 600-850 Sn 1.7 × 10−2 1.9 600-850

Zn 1.0 × 10+1 2.5 600-850

Indium antimonide (InSb) Ag 1.0 × 10−7 0.25

Au 7 × 10−4 b 0.32 b 140-510

Cd 1.0 × 10−5 b 1.1 b 250-500 1.23 × 10−9 0.52 442-519 1.26 1.75 1.3 × 10−4 1.2 360-500

Co 2.7 × 10−11 0.39 10−7 0.25 440-510

Cu 3.0 × 10−5 0.37 9.0 × 10−4 b 1.08b

Fe 10−7 0.25 440-510 Hg 4.0 × 10−6 b 1.17b

(Continued)

Semiconductor Diffusing Element Do (cm2/s) ΔE (eV)

of Validity (°C)

In 0.05 1.81 450-500 1.8 × 10−9 0.28

Ni 10−7 0.25 440-510 Sb 0.05 1.94 450-500

1.4 × 10−6 0.75

Sn 5.5 × 10−8 0.75 390-512 Te 1.7 × 10−7 0.57 300-500 Zn 0.5 1.35 360-500

1.6 × 10−6 2.3 ± 0.3 360-500 5.5 1.6 360-500

Polycrystal 1.7 × 10−7 0.85 390-512 5.3 × 10+7 b 2.61

Zinc (high concentration)

6.3 × 10+8 2.61

8.7 × 10−10 b 0.7b

Conc. 2.2 × 1020 cm−3 9.0 × 10−10 ~0 Single crystal 1.4 × 10−7 0.86 390-512

Indium arsenide (InAs) Cd 4.35 × 10−4 1.17 600-900 Cu 0.52b

Ge 3.74 × 10−6 1.17 600-900 Mg 1.98 × 10−6 1.17 600-900

S 6.78 2.20 600-900 Se 12.55 2.20 600-900

Sn 1.49 × 10−6 1.17 600-900 Te 3.43 × 10−5 1.28 600-900 Zn 3.11 × 10−3 1.17 600-900

Indium phosphide (InP) In 1 × 10+5 3.85 850-1000 P 7 × 10+10 5.65 850-1000

Iron oxide (Fe3O4) Fe 5.2 2.4

Lead metasilicate (PbSiO3) Pb 85 2.6

Lead orthosilicate (PbSiO4) Pb 8.2 2.0

Mercury selenide (HgSe) Sb 6.3 × 10−5 0.85 540-630

Nickel aluminate (NiAl2O4) Cr 1.17 × 10−3 2.2 Fe 1.33 3.5

Nickel chromate (III) (NiCr2O4) Cr 0.74 3.1 Cr 2.03 × 10−5 1.9 Fe 1.35 × 10−3 2.6 Ni 0.85 3.2

(Continued)

Semiconductor Diffusing Element Do (cm2/s) ΔE (eV)

of Validity (°C)

Selenium (Se) (amorphous) Fe 1.1 × 10−5 0.38 300-400 Ge 9.4 × 10−6 0.39 300-400 In 5.2 × 10−6 0.32 300-400

Sb 2.8 × 10−8 0.29 300-400 Se 7.6 × 10−10 0.14 300-400 Sn 4.8 × 10−8 0.39 300-400

Te 5.4 × 10−6 0.53 300-400 Tl 1.4 × 10−6 0.35 300-400 Zn 3.8 × 10−7 0.29 300-400

Silicon (Si) Al 8.0 3.5 1100-1400 Ag 2 × 10−3 1.6 1100-1350 As 3.2 × 10−1 3.5 1100-1350 Au 1.1 × 10−3 1.1 800-1200

B 1.0 × 10+1 3.7 950-1200 Bi 1.04 × 10+3 4.6 1100-1350 Cu 4 × 10−1 1.0 800-1100 Fe 6.2 × 10−3 0.86 1000-1200

Ga 3.6 3.5 1150-1350 H2 9.4 × 10−3 0.47 1000-1200 He 1.1 × 10−1 0.86 1000-1200 In 1.65 × 10+1 3.9 1100-1350

Li 9.4 × 10−3 0.78 100-800 P 1.0 × 10+1 3.7 1100-1350

Sb 5.6 3.9 1100-1350 Tl 1.65 × 10+1 3.9 1100-1350

Silicon carbide (SiC) Al 2.0 × 10−1 4.9 1800-2250 B 1.6 × 10+1 5.6 1850-2250 Cr 2.3 × 10−1 4.8 1700-1900

Sulfur (S) S 2.8 × 10+13 2.0 >100

Tin zinc oxide (SnZn2O4) Sn 2 × 10+5 4.7 Zn 37 3.3

Zinc aluminate (ZnAl2O4) Zn 2.5 × 10+2 3.4

Zinc chromate (III) (ZnCr2O4) Cr 8.5 3.5 Zn 60 3.7

Zinc ferrate (III) (ZnFe2O4) Fe 8.5 × 10+2 3.5 Zn 8.8 × 10+2 3.7

Zinc selenide (ZnSe) Cu 1.7 × 10−5 0.56 200-570

(Continued)

Semiconductor Diffusing Element Do (cm2/s) ΔE (eV)

of Validity (°C)

Zinc sulfide (ZnS) Zn 1.0 × 10+16 6.50 >1030 1.5 × 10+4 3.25 940-1030 3.0 × 10−4 1.52 <940

Source: Data from R. E. Bolz and G. L. Tuve (Eds.), Handbook of Tables for Applied Engineering Science, 2nd Edn., CRC Press, Cleveland, 1973, pp. 251.