ABSTRACT
ABST R AC T Advances in technology demand high volume production of semiconductors. Chemical vapor deposition (CVD) is a standard technique for producing semiconductors when quality and cost matter the most. The substrate geometry has a large effect on the deposition uniformity or rate, which in turn plays a critical role in assessing the performance of the CVD reactor. Unfortunately, in the open literature, not much attention has been paid to the substrate geometry. Instead, standard geometries and those produced via heuristics have been employed. This paper proposes a deposition model with exible substrate geometry. The optimal geometry is determined through shape optimization, such that a performance criterion (such as deposition uniformity or deposition rate of zinc sulde) is achieved. Overall the model results compared favorably with experimental data from the open literature for conventional substrate geometries, namely vertical and horizontal slab-shape.
