ABSTRACT
In GaAs, which is widely used in spin electronics, the valence band maximum and the conduction band minimum are aligned at the
Γ
point, the center of the Brillouin zone (
k
=
0), with an energy gap
E
=
1.43 eV at room temperature (RT), indicating that the only transition induced by photon energy
h
ν
occurs at
Γ
(direct gap semiconductor [SC]).
