ABSTRACT
This chapter discusses possible applications of Gallium nitride (GaN) light-emitting devices based on GaN activated with rare earth ions. Growth of GaN-based devices on lattice mismatched sapphire requires special technological steps. Dislocation-related detrimental effects are partly reduced by the large magnitude of potential fluctuations present in InGaN quantum wells. Depth-profiling experiments indicate that GaN excitonic emission mostly comes from the upper cap layer. Two GaN-related DAP emissions also come from the wave guiding region of the device. The characteristic optical properties of rare earth elements have led to many important photonic applications, including solid state lasers, optical storage devices, displays, components for optical telecommunication.
