ABSTRACT
Most efforts to improve the growth of quantum dots (QD) are focused on resolving the two difficulties of ordering dots and maintaining size uniformity within dot layers. The band gaps of the semiconductors used in QD growth are well known, as are the band offsets for adjacent materials in heterostructure devices. Near-infrared emission from QDs necessarily involves the recombination of an electron with a hole, both of which must be generated electrically. Quantum dots grown epitaxially on Gallium arsenide or one of its ternary compounds are most often formed by a self-assembly process. Quantum dots are uniquely able to provide single photon emission. Raising the emission wavelength required changes in the typical methods used to grow QDs.
