New quantum wire and quantum dot structures by selective MBE on patterned high-index substrates K H Ploog and R No¨tzel

The clever combination of lithographic patterning of high-index substrates with self-organized growth and atomic hydrogen assistance allows fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior electronic properties by molecular beam epitaxy. The selectivity of patterned growth on high-index GaAs substrates differs qualitatively from that on low-index ones. In this paper we briefly review our recent results in this field.