ABSTRACT
Compared with silicon (Si), silicon carbide (SiC) is a wide-bandgap semiconductor with superior physical and chemical properties and is recognized as one of the most promising materials for applications
2.1 Introduction: Brief Review of the Fabrication and Properties of SiC and Its Nanostructures and Nanocomposite Thin Films .................................................................... 49
2.2 Literature Survey of Fabrication and Characterization of SiC Nanostructures and Nanocomposite Thin Films by Using Physical and Chemical Syntheses .............................. 51 2.2.1 Fabrication and Characterization of SiC Nanostructures and Nanocomposite
Thin Films by Using Physical Synthesis .................................................................... 51 2.2.2 Fabrication and Characterization of SiC Nanostructures and Nanocomposite
Thin Films by Using Chemical Synthesis .................................................................. 52 2.2.3 Fabrication and Characterization of SiC Nanoparticles by Using Physical and
Chemical Syntheses .................................................................................................... 55 2.3 Recent Development of Fabrication and Characterization of Nanostrutured SiC Thin
Films by Using Thermal Annealing ....................................................................................... 56 2.3.1 Formation of np-SiC Films from Si/C/Si Multilayers by Using Post-Thermal
Annealing ................................................................................................................... 56 2.3.2 Formation of Nanoweb SiC Films through In Situ High-Temperature Reaction
of C Deposited on Si Substrate ................................................................................... 63 2.4 Reaction Mechanism of Nanostrutured SiC Thin Films by Using Thermal Annealing ........66
