ABSTRACT
Graphene is a monolayer of hexagonally ordered carbon atoms. Owing to its unique properties, graphene has become the subject of comprehensive studies. There are three basic methods for the production of graphene. Peeling of graphene from the surface of pyrolitic graphite crystals forms the basis for the rst group of methods-mechanical methods [1], whose advantages are simplicity, low cost, and the possibility of producing large-area (~100 µm) samples. However, nonuniform thickness and difcult transfer procedure of the layer onto the substrates are the main drawbacks that hinder the extensive use of mechanical methods. The second group is represented by chemical methods. These methods are distinguished by a high yield of high-quality material; however, small dimensions of the samples are a disadvantage. The third group includes epitaxial methods and thermal dissociation of silicon carbide wafers. Among the advantages of these methods are: lm production with easily controllable thickness and high reproducibility of parameters over the entire surface of the wafer. In particular, it is this group of methods that is the most interesting for the development of technologies of microelectronic and nanoelectronic devices.
