ABSTRACT
This contribution deals with the main scientic results on graphene-related materials for resistive nonvolatile memories. Nonvolatile memories are identied as the key device for the future of computational system considering the reduced energy consumption compared with volatile memories. However, a specic new technology has not been identied until now considering the issues related to scalability and cost. Graphene-related materials offer an interesting and extremely promising alternative to existing technologies. In this contribution, we show the main works dealing with graphene layers, graphene oxide, and reduced graphene oxide. These works are quite recent but show impressing results especially in terms of writing time and endurance/cyclability compared with common ash memories. The other main advantage of these materials is the potential of developing a highly scalable complementary metal-oxide-semiconductor compatible technology. Moreover, the carbonaceous materials are easily available compared with rare earths and also compatible with exible applications and can open a new eld of innovation.
