ABSTRACT
In this chapter, semianalytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons are presented. Since electron-hole puddles are experimental facts in all graphene samples, they have been incorporated in our calculations. The temperature dependence of the quantum capacitance around the charge neutrality point is also investigated and the obtained results are in agreement with many features recently observed in quantum capacitance measurements on both monolayer and bilayer graphene devices. Furthermore, the impact of nitesize and edge effects on the quantum capacitance of graphene nanoribbons (GNRs) is studied taking into account both the edge-bond relaxation and third-nearest-neighbor interaction in the band structure of GNRs.
