ABSTRACT
Graphene is a candidate material to replace silicon for the development of electronic devices with unsurpassed characteristics and of new carbon-based technologies. The success of graphene in this regard depends critically on three factors: rst, a better understanding of the growth dynamics on substrate surfaces, notably metals, intended to achieve high-quality large grain size; second, functionalization or doping intended to open a tunable band gap in the otherwise zero-gap pristine graphene; and third, accurate monitoring of optical and electronic properties by spectroscopic investigation.
