ABSTRACT
The fabrication of graphene-based eld-effect transistors (GFETs) for electronic applications in nanoelectronics is discussed within this chapter. The graphene layers needed are grown in situ using a transfer-free catalytic chemical vapor deposition (CCVD) process directly on silicon dioxide. The skillful selection of process parameters allows the fabrication of single, double, or multilayered graphene FETs (GFETs). The lateral placement of the GFETs is performed via wellknown lithography as it is used throughout all silicon wafer processing. Directly after growth, the fabricated GFETs are electrically functional and can be electrically characterized via the catalyst metals as contact electrodes. Depending on the used lithography mask, up to 2000 GFETs have been produced on one single 2-inch wafer. Various methods are used for structural characterization like SEM (scanning electron microscopy), TEM (transmission electron microscopy), TEMlattice analysis, AFM (atomic force microscopy) as well as Raman-spectroscopy and have been combined with the electrical characterization to investigate in situ grown graphene lm layer properties in order to prove the concept of the developed fabrication process.
