4 Pages

The chemical and electrical properties of InGaN quantum wells grown with interrupts: a comprehensive TEM case study

Department of Materials Science & Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K. fDepartment of Materials Science & Engineering, Korea Advanced Institute of Science & Tech­ nology, 371-1 Gusong-Dong, Yusong-Gu, Daejon 305-701, Korea.