ABSTRACT
Infrared microspectroscopy has been widely used in the semiconductor industry to many years [1,2]. The introduction of modern microscopes which include high-quality infrared and visible optics has extended the applicability of the technique. Fluorescence, polarized, and phase-contrast microscopy of the precise area analyzed spectroscopically is feasible. In addition, the reflectance objectives now available permit a wide range of analyses on a selected area with minimal sample preparation. Practical aspects of the technique have been discussed else where [2,3].
