ABSTRACT
Abstract. We have investigated temporal behavior of photo-induced absorption changes and of yellow luminescence to study origins of persistent absorption change in InGaN heterostructures. We found that the absorption change and yellow luminescence decay in the same time scale of 100 |lls. Moreover, the magnitude of absorption change is larger in an InGaN layer, which has stronger yellow luminescence. These results and quantitative analysis indicate that Ga vacancy and its complexes, those are believed to be related to yellow luminescence, and deeper mid-gap levels play important roles in persistent absorption change.
