ABSTRACT
Abstract. We have studied the electrical properties of InAs/InP selfassembled quantum dots (QDs) with GaAs thin layers by capacitancevoltage and deep level transient spectroscopy measurements. The thermal activation energies for electron emission from InAs/InP QDs with GaAs insertion of 0, 2.5, 5, 7.5 and 10 mono-layers were obtained 0.59, 0.60, 0.61, 0.62 and 0.62 eV, respectively. On the other hand, the capture barrier heights of QDs in these GaAs inserted samples were measured 0.16, 0.19, 0.24, 0.26 and 0.30 eV, respectively, from GaAs conduction band edge. These results imply that the strain in the QDs layer affects to the capture barrier height as well as the quantum confined level.
