Spontaneous recombination lifetime in compressively strained InGaAs and InGaP Quantum Well Lasers Grown on GaAs Substrates

Abstract. The spontaneous carrier recombination lifetime in compressively strained InGaAs and InGaP quantum well lasers grown on GaAs substrates increases with the compressive strain or In content. It will be explained that introduction of the compressive strain substantially eliminate the electron transition probability between the higher energy subbandls, which are not responsible to the lasing.