ABSTRACT
Abstract. We report on the performance of the high power InGaN/GaN flip chip blue and white LED using patterned sapphire substrate, indium tin oxide (ITO) transparent material, and A1 based reflective metal contacts with W diffusion barrier. In this paper, we optimize the p ohmic contact with ITO transparent material using InGaN/GaN : Si superlattice on the top of LED epi structure. Also we show the effect of W diffusion barrier metal layer. As the results, the blue LED shows 198mW radiant flux, 8.471m/W luminous efficacy and 16.1% WPE values. When fabricated to white LED, it shows the 120mW radiant flux, 30.11m/W luminous efficacy and 9.7% WPE values.
