ABSTRACT
Joon Seop Kwak, K K Choi, T Jang, Y J Sung, S N Lee, K H Ha, O H Nam and Y Park Photonics Lab. Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, Korea
Abstract. Recent progress on the fabrication processes of AlInGaN-based blue-violet laser diodes (BV-LDs) reducing operating current has been discussed. In order to reduce operating current of the BV-LDs, we optimized ridge width and thickness between active layer and etched surface. We also developed stress-induced cleaving (SIC) method in order to obtain smooth mirror facets. We further reduced the operating current by enhancing thermal dissipation. By improving fabrication processes for high power AlInGaN-based BV-LDs as well as optimizing design and growth conditions for BV-LD structures, the operating current and voltage at CW 60 mW at 60°C were achieved as 84 mA and 4.8 V, respectively.
