ABSTRACT
The features and mechanism of Colossal Magnetoresistance, or CMR, in manganese oxides as well as device physics are highlighted in this book, with a focus on tunneling MR for some artificial structures. Underlying new science, such as tunable electron-lattice interaction in a metal and roles of orbital degrees of freedom in producing an unconventio
TABLE OF CONTENTS
part |2 pages
SPIN DYNAMICS AND ELECTRONIC STRUCTURES
part |2 pages
MATERIALS SYSTEMATICS AND LATTICE EFFECTS
part |2 pages
TUNNELLING MAGNETORESISTANCE