ABSTRACT
The recent advances in the material quality of the group Ill-Nitride semicon ductors (GaN, AIN, and InN) have led to the demonstration of high-brightness light emitting diodes (LEDs), blue laser diodes, and high-frequency transis tors, much of which is documented in this book and recent reviews [1-4]. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this chapter, recent developments in ion implantation of the group Ill-Nitride semiconductors are reviewed.
