ABSTRACT
B. Expected Properties of B/C/N Materials The properties of B/C/N materials are expected to be hybrids of the properties of those of graphite and h-BN. B/C/N materials are generally expected to have semiconducting properties represented in Fig. 3. For B/C/N materials, several kinds of semiconductors can be expected. One is an intrinsic type of B/C/N semiconductor (Fig. 3d), which can be converted to an «-type (Fig. 3e) or a ptype (Fig. 3f) by reduction or oxidation, respectively. The band gap of the in trinsic type of B/C/N semiconductor may depend not only on the composition but also on the particular atomic arrangement. BN(C,H) material based on the h-BN network, which contains carbon, hydrogen, or other light atoms as im purities, might behave as another extrinsic type of semiconductor (Fig. 3h or i). Furthermore, CXN (Fig. 3b) or CXB (Fig. 3c) material based on a graphite-like network might show better electroconductive property because the electron de ficiency of the boron atoms or the additional electrons of the nitrogen atoms could create hole carriers (in the valence band) or electron carriers (in the con-
Figure 2 Crystal structure of hexagonal boron nitride.
