A novel resonant tunneling logic gate capable of 100 fs/gate class operation

Resonant Tunneling diodes (RTDs) are the most promising candidate for future ultrahigh speed devices. We proposed the MOBILE (MOnostable-BIstable transition Logic Element) for high-speed digital applications exploiting the negative differential resistance (NDR) of the RTDs [1]. Several high speed ICs using MOBILES have been demonstrated such as the 35 Gb/s D-FF [2] and 34 GHz T-FF [3]. However, the operation speed of the MOBILE is still restricted by the conventional transistors used for effective peak current modulation, and the inherent high-speed potential of RTDs is not fully developed. Here, we propose a novel resonant tunneling logic gate C2MOBILE (Capacitor-Coupled MOBILE), which can surmount this restriction.