ABSTRACT
Dept, of Information and Communication, K-JIST, 1 Oryong-dong Buk-gu, Kwangju, Korea 500-712 *Phone: +82-62-970-2208, Fax: +82-62-970-2224, E-mail: iisong@kiist.ac.kr
1 NEOPTEK, Hogye-dong Dongan-gu Anyang-shi, Kyungki-do, Korea 431-081
InP MISFETs attracted much attention due to the excellent material properties of InP including a high electron saturation velocity, a large critical field for velocity saturation, a high breakdown field, and a high thermal conductivity. By utilizing these properties of InP favourable for microwave power applications, microwave transistors having excellent power performances were reported [1-3]. However, InP MISFETs typically suffered from problems such as incomplete pinch-off due to insulator/InP interface traps associated with poor insulator/InP interface characteristics [2, 4]. While gate insulators typically used for InP MISFETs were S1O2 or S13N4 deposited by CVD or e-beam evaporation, there have been efforts to realize stable insulators for better interface characteristics [5-7]. In this paper, we report the characteristics of depletion-mode InP MOSFETs implemented by a liquid phase oxidation of Ino.53Gao.47As in combination with an oxygen plasma treatment which showed complete pinch-off characteristics.
