Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels

Instead of using lithography to define the ultra-short channel, we use molecular beam epitaxy crystal growth and employ a vertical transistor geometry. Thus all relevant transistor dimensions can be defined with atomic precision. With most of the research groups focused on Si-based vertical devices [2,3], we address the operability of GaAs-based ones. In this paper we present latest results of vertical transistors, which posses a source-drain separation of 50 nm.