Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with lOnm-scale embedded InGaAs islands

In this work, we study scattering mechanisms of 2DEG in selectively doped n-AlGaAs /GaAs heterojunctions, in which Ino.5Gao.5As dots are embedded in the vicinity of a GaAs channel. In this system, electrons are scattered both by the long range Coulomb potential generated by trapped electrons on each QD and by the short range attractive potential resulting mainly from the band off set at the dot-matrix boundary. By comparing measured lifetimes with thentheoretical values, we evaluate here quantitatively roles of those potentials in determining the electron transport in this system.