Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method

Surface structures of semiconductor quantum dots (QDs) strongly affect the relaxation process of photo-generated carriers because of a high value of the surface to volume ratio. Thus, the control of the surface structure is important to control the luminescence properties of the QDs. Furthermore, the preparation of the QDs with a narrow size distribution is essential since optical properties of the QDs depend on the size.