Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy D Huang, C W Litton, M A Reshchikov, F Yun, T King, A A Baski and H Morkoq

doi:10.1201/9781482268980-99

Chapter

Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy D Huang, C W Litton, M A Reshchikov, F Yun, T King, A A Baski and H Morkoq

Chapter

ABSTRACT

The samples reported in this paper were grown on c-plane sapphire substrates by MBE with both ammonia and radio frequency activated nitrogen sources. Two sets of samples were grown. The first set of samples included a buffer containing a few AIN and GaN layers grown at different temperatures. The second set contained a buffer layer into which additional QD structures were inserted. GaN films were grown on top of these buffer layers at various temperatures.