ABSTRACT
BJT Bipolar Junction Transistor COMFET Conductivity-Modulated Field-Effect Transistor (= IGBT) DMOS Double-Diffused Metal-Oxide-Semiconductor EST Emitter-Switched Thyristor FET Field-Effect Transistor GCT Gate-Commutated Thyristor GTO Gate Turn-Off (-Thyristor) IGBT Insulated Gate Bipolar Transistor IGCT Integrated Gate-Commutated Thyristor
(combination of GCT and its gate drive) IEGT Injection-Enhanced (Insulated-) Gate (Bipolar-) Transistor
(a subvariant of the IGBT) IGT Insulated Gate Transistor (= IGBT) JFET Junction Field-Effect Transistor MCT MOS-Controlled Thyristor MOS Metal-Oxide-Semiconductor MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor MPS Merged Pin Schottky NPT Non-Punch-Through PT Punch-Through RMS Root Mean Square RT Room Temperature (= 300 K) SCR Space-Charge Region (= Depletion Layer) SOA Safe Operating Area SPEED Self-Adjusting P-Emitter Efficiency Diode
