ABSTRACT
Heterojunction photovoltaic devices were fabricated using single crystal silicon nanowires and the organic semiconductor regioregular poly-(3-hexyl thiophene) (RR-P3HT). N-type nanowires were first grown on an n+ silicon substrate by the vapor-liquid-solid (VLS) method. Devices were then fabricated by filling the gap between the nanowires and a transparent PEDOT:PSS-coated ITO electrode with RR-P3HT evaporated from chlorobenzene. Device performance indicates that both silicon and P3HT act as absorbers for photovoltaic response. Initial results show both open circuit voltage and short circuit current are both lower than expected, most likely duedue to the methods of photovoltaic cell construction.
