ABSTRACT
OAWG device implementation involved two configurations. The first relies on electrical excitation of optical modulators, and the second uses optical excitation of optical modulators. Figure 12.2 shows the mask layout and photograph of a 100 GHz (10 channel × 10 GHz) InP-based OAWG [25]. This device uses a matched pair of arrayed-waveguide gratings (AWGs) to implement the demultiplexing and multiplexing operations. Fabrication was performed on a semi-insulating InP substrate to enable high-speed operation. The chip employed two electrical layers, a DC layer to handle phase-error correction and an RF layer to drive amplitude and phase modulators via the electro-optic effect. The devices underwent a 14 mask-layer fabrication process to accommodate optical waveguides, high-speed RF transmission lines, and DC electrical lines. Figure 12.2 illustrates the first type of device where a pair of AWGs of 10 channels and 10 GHz spacing demultiplexes and multiplexes the signals with 10 sets of amplitude and phase modulators placed in between them to provide dynamic coherent modulation.
