ABSTRACT
Optoelectronics have been the driving force behind III-Vs on silicon and gallium-nitrideingeneral.DespitethebigsuccessofGaNgrowthonsapphireandSiCintheearly1990s,GaNgrowthonsiliconhasbeenonlyaplaygroundforresearchersuntiltheendofthatdecade.Thisismostlybecause thegrowthonsapphireandSiCwassimpleandyieldedahighoutputpower for light-emitting devices. In contrast to that, device performance on Si was, if any,verypoor.Thischangedalittleintheearly2000swhenthickercrack-free GaNonSilayersweredemonstratedandcompaniesasNITRONEXstarted withthecommercializationofGaNonSiRFdevices,leadingtoachange ingeneralawarenessofGaNonSifromacademicresearchtoapotential
CONTENTS
12.1Introduction ................................................................................................447 12.2Patterned and Planar Growth ..................................................................448
