ABSTRACT
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The monolithic integration of device-quality III-V compound semiconductor materialsandtheiradvantageousopticalandelectronicpropertieswithSi substrateshasbeenadrivingforceinfundamentalsemiconductormaterials researchfordecades.Whilethereare,especiallyinrecentyears,twomajor motivations for this effort-the addition of III-V functionality to the Si VLSI platform (e.g., optoelectronic interconnects and high-mobility CMOS channelmaterials)andtheintegrationofhigh-efˆciencyIII-Vphotovoltaics(PV) onlow-costSisubstrates(versushigh-costconventionalGaAsorGe)—itis thelatterobjectivethatwediscusshere.However,itisworthnotingthat, inadditiontotheeconomicbeneˆtsassociatedwiththeintegrationofIII-V solar cells on Si substrates, there are important performance advantages in theuseofSibasedonthephysicalpropertiesofSiitselfandtheuniqueepitaxial III-V bandgap proˆles achievable on the Si platform.
