ABSTRACT
At present Hgi-^Cd^Te (HgCdTe) is the most important intrinsic semiconductor alloy system for infrared detectors. However, HgCdTe is the most difficult of the materials to use for infrared detectors. Present HgCdTe focal plane arrays (FPAs) are limited by the yield of arrays, which increases their cost.1 In spite of achievements in material and device quality, difficulties still exist due to lattice, surface, and interface instabilities.2-6 This realization, together with continued progress in the growth of new ternary alloy systems and artificial semiconductor heterostructures, have intensified the search for alternative infrared materials.
