ABSTRACT
Cluster ion beams can be utilized to enhance reactive growth of thin films at low substrate temperatures. The high density of transient energy produced by individual cluster impacts on a surface can significantly increase the rates of chemical reactions on the surface even at low temperatures. Surface smoothing and microstructure control take place during deposition of single-layer or multiple-layer thin films. High chemical reactivities resulting in good stoichiometric composition and effects that result in excellent surface morphology and in wellcontrolled film microstructure have been demonstrated by using O2 gas cluster ion-assisted deposition. Representative examples are discussed below for Ta2O5 and diamondlike carbon (DLC) film depositions.
