ABSTRACT
The spin polarization of a ferromagnet at low temperature can be directly measured using ferromagnet/Al-O/superconductor tunnel junctions. Spin injection into semiconductors is the key to developing semiconductor spintronic devices such as Datta-Das-type spin-dependent field-effect transistors and spin-dependent metal-oxide-semiconductor field-effect transistors. An inverse of the spin-torque diode effect is the microwave emissions that occur when a DC current flows through a 100-nm-scale magnetoresistive device. Spin-transfer torque acting on the free-layer magnetic moment can induce steady precession of the free-layer moment at an ferromagnetic resonance frequency. Spin Dice can theoretically generate enormous amounts of random numbers using large parallel data processing. Random numbers are essential building blocks in modern cryptographic systems to keep information communication technologies highly secure and confidential. The giant tunneling magnetoresistance effect in magnetic tunnel junctions is therefore expected not only to extend the applications of existing devices but also to help achieve novel spintronic applications.
