ABSTRACT
This chapter reviews spin-dependent transport through a Schottky barrier and in a bulk semiconductor channel. It discusses the incorporate a time-dependent analysis in which a technique to generate digital signals. The chapter presents the working principles of semiconductor magneto-logic reprogrammable gates. It explores the semiconductor devices with magnetic contacts, whose magnetization configuration is non-collinear. The research in the emerging field of semiconductor spintronics has brought theoretical proposals of various devices exploiting the spin degree of freedom. Theoretical analysis of spin injection from metals into semiconductors shows that junctions with large resistance are necessary for the current to be polarized. The reflection coefficients in the left matrix are of electrons from the semiconductor side of the junction. The boundary conditions across a semiconductor/ferromagnet junction were derived using the assumption that the spin-z-axis is collinear with the majority spin direction in the ferromagnet.
