ABSTRACT
This chapter focuses on spintronics in two-dimensional (2D) materials focuses on the injection, transport, and manipulation of spins in 2D materials as well as on related advances in 2D magnetism. It presents the spin-valley coupling in transition metal dichalcogenides, including the valley Hall effect, long-lived spin-valley polarized states, the manipulation of valleys by spins, the manipulation of spins by valleys, and the spin-valley coupling induced Ising superconductivity. The discusses the induced extrinsic magnetism in 2D materials, using graphene as an example, by adatom doping with atomic hydrogen, and magnetic proximity effect with a magnetic insulator. The chapter also presents the development of intrisinc 2D ferromagnetism/antiferromagnetism, the electric field effect of 2D ferromagnetic (FM) materials, and the magnetic tunnel junctions based on 2D FM materials. 2D ferromagnetic materials have several important advantages for the application as information storage, compared to conventional metal and semiconductor materials.
