ABSTRACT
Chapter 18 brings out the prospects of exploiting the multiplicity, the broad energy distribution, and the short time structure of laser-accelerated ions for ion implantation technology and perturbed angular distribution (PAD) studies, with certain advantages over the ions provided by conventional accelerators. For ion implantation, the broad energy is demonstrated to be helpful in achieving a quasi-uniform implantation profile up to a few microns below the surface, while the ion multiplicity is argued to have a potential of implanting multiple impurities simultaneously. The arguments are exemplified with simulations illustrating uniform doping of Fe in LiNbO3 and Au in PbTe films. The ion multiplicity is further shown to have the ability of producing multiple nuclear probes via nuclear reactions, e.g. H/C → 45Sc, for PAD studies. Moreover, control of ion bunch duration down to sub-nanosecond time scales is shown to expand the list of nuclei in the reaction products utilizable in PAD. It is also demonstrated that some of the daughter nuclei in the reaction can be implanted in the sample under study to modify the sample properties, while some others can be used as PAD probes simultaneously.
