ABSTRACT
This chapter describes vertical surrounding-gate Tunnel field-effect transistors (TFETs) using III-V/Si nanowires heterojunctions. It discusses several steps for obtaining steep turn-on behavior due to a pure tunnel process and demonstrated that the exotic III-V/Si heterojunction was a moderate tunnel junction for the TFETs with a steep subthreshold slope (SS). The chapter introduces some approaches for enhancing the tunneling probability in TFETs while avoiding the insoluble dilemma in the quantum tunneling process. TFETs with a steep SS have been attracting much attention as building blocks for future low-power integrated circuits and complementary metal-oxide semiconductor technology devices. The quality of the metal-oxide-semiconductor interface plays a key role in achieving a steep SS in TFETs because electrostatic gate control has a dominant role in determining the SS of TFETs. Heavy doping is required to increase the on-state current and lower the contact resistance of a TFET.
