ABSTRACT
This chapter presents an overview of compound semiconductor materials and designing procedures of GaN based High Electron Mobility Transistor (HEMT) structures and a physics-based compact model for accurate circuit simulation. Various industry-standard HEMT models are discussed among which special importance is given to surface-potential-based models. The model is based on unified regional modeling (URM) approach of the 2-dimensional electron gas (2-DEG) charge density. HEMT-specific features are also covered such as nonlinear source/drain access resistances and self-heating effects. Apart from the compact model, a brief overview about DC and RF simulation of HEMTs in TCAD environments are also discussed, covering critical points such as simulation parameters and device Figure-of-merits (FoMs). The subjects presented in this chapter create a broad platform for understanding next generation III-V on Si co-integrated ultra-large scale integration systems.
