ABSTRACT
As CMOS device scaling is approaching its physical and peak performance, future downscaling of CMOS in accordance with Moore’s law and to meet the demands of the ITRS (International technology roadmap for semiconductors) roadmap will involve new materials for the gate dielectrics and the high mobility channels as well as novel structures. High Electron Mobility Transistor (HEMT) is laterally generated III-V compound semiconductor uses heterojunction for its operation and performance. The increasing interest of high-speed communication and high-frequency systems leads to low cost, and power consumption, high-level integration devices. On the other hand, with superior material properties and band-engineering, compound semiconductors have enabled new device concepts like resonant tunnelling diode (RTD), HEMT, and Heterojunction Bipolar Transistor (HBT). These devices have demonstrated excellent characteristics for demanding applications that range from high speed, low noise microwave and millimeter-wave circuits to fast digital and optical electronics. For the above applications InP/InAlAs/InGaAs HEMT devices performs better than Si based devices. Therefore, this chapter presents the performance of InP/InAlAs/InGaAs HEMTS for high speed and low power applications
