ABSTRACT
In developing advanced high-power devices, most of the research and development efforts in Solid state devices and IC’s are oriented towards High Electron Mobility Transistors (HEMT) and the III-V compound materials. In the past few years, the GaN based HEMT has becoming an emerging device because of its high power and high frequency applications. This chapter demonstrates various GaN based high electron mobility transistor structures for high power applications. The impact of barrier layer in the device structure especially the back-barrier layer. The DC and RF characteristics of the device is explained in detail. Further, versatile method to improve the breakdown voltage of the device is also discussed. A small signal equivalent circuit for the GaN HEMT is developed and discussed in detail. The chapter is concluded with a complete overview of AlGaN/GaN HEMT structures and the various techniques to improve the power performance of the device.
