Introduction

This chapter presents an overview of the fin field-effect transistor (FinFET) devices for the manufacturing of very large scale integrated (VLSI) circuits and systems at the nanometer node. First of all, the constraints of scaling down mainstream metal-oxide-semiconductor field-effect transistors (MOSFETs) beyond the 22-nm node due to short-channel effects (SCEs) are overviewed. Then the scalable alternative planar-MOSFET and non-planar-FinFET devices for VLSI circuits and systems beyond the 22-nm node are discussed. It is shown that the FinFET due to its ultrathin-body and multigate configuration is immune to SCEs and replace planar-MOSFETs in the sub-22 nm regime for VLSI circuit manufacturing. Finally, a brief history of the emergence and development of FinFETs for VLSI technology is presented.