ABSTRACT
This chapter presents a brief overview of the basic semiconductor physics and the theory of intrinsic and extrinsic semiconductors for the understanding of the fin field-effect transistor (FinFET) devices. First of all, the basic properties of intrinsic semiconductor materials including bond and band structures, intrinsic carrier concentration, and energy levels are discussed. Then the behavior of the extrinsic semiconductors, carrier statistics of electrons and holes, carrier transport, and the fundamental semiconductor equations are presented. Finally, a brief overview of the operational principles of n-type and p-type semiconductors forming pn-junctions are described.
