ABSTRACT
This chapter presents the basic structure and operation of multiple-gate metal-oxide-semiconductor (MOS) capacitor systems as the foundation for developing fin field-effect transistor (FinFET) device theory. Analytical expressions for multiple-gate MOS capacitor systems are derived to discuss the accumulation, depletion, and inversion mode operations of multiple-gate MOS capacitor systems. A unified surface potential function is developed to analyze the characteristics of multiple-gate MOS capacitors applicable to FinFET devices. Finally, a unified inversion charge expression is presented to account for the substrate doping effect in multiple-gate MOS capacitors.
