ABSTRACT
Measurements and analysis of the noise spectra under conditions where they are influenced by carrier transport processes allow one to determine the amblpolar mobility and diffusion coefficient, to estimate the velocity of surface recombination and coefficients of light absorption in a photoconductor, to find the parameters of the levels as well as to measure the carrier drift time and the Maxwell relaxation time. In addit- ion, such investigations make it possible to obtain important information concerning the photoconductivity processes, for example, to estimate the photocarrier distribution in the samples, to explain the mechanism of photoconductivity (bipolar or quasiunipolar), to establish the character of the spatial distribution of r- and s-centers and to study the process of photocurrent quenching.
