ABSTRACT
Noise examination of the physical situations described in this chapter has demonstrated the wide possibilities offered by noise methods for the investigation of the mechanisms and of the nature of different processes in semiconductors. The following results seem to be of most interest.
A rather general mechanism of excess diode currents is found. A model for these currents is proposed. The physical reason for their occurrence has been recognised.
The mechanism of non-trivial minority carrier injection in Schottky diodes has been solved and the other physical information concerning the injection electroluminescence of such diodes has been obtained.
The nature of many physical effects observed in semiconductor diodes under illumination has been found.
The mechanism of residual conductivity has been established.
A lot of new physical ideas have been born trying to probe the mystery of 1/f noise.
In addition, a number of new methods for the experimental determination of noise sources and the investigation of their physical mechanisms has been developed in the course of above research.
