ABSTRACT
This chapter aims to study phonons produced by the dominant electron transitions between the equivalent X valleys in silicon. It utilizes the Monte Carlo method first to select stochastically the time between phonon collisions and to select a final-state pair of phonons from the probability distribution for anharmonic decay. The chapter shows that g-process phonons decay into one near-equilibrium transverse acoustic phonon and another intermediate longitudinal phonon either on the acoustic or optical branch. It focuses primarily on the behavior of intervalley phonons after they are generated by the electron transitions, because they are most significant to complementary metal-oxide-semiconductor technology and are seen as a potential bottleneck to heat transfer. The problem of phonon transport modeling, including selecting final-state pairs for the three-phonon decay process, can be approached by adapting the Monte Carlo method, which was developed to solve the problem of electron transport in semiconductors.
